Vol. 7, No 1, 2009 pp. 33 - 44
DOI 10.2298/FUPCT0901033R
UDC 519.876.5

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APPLICATION OF THE LEVEL SET METHOD ON THE NON-CONVEX HAMILTONIANS
B. Radjenović¹, M. Radmilović-Radjenović¹, M. Mitrić^2
1Institute of Physics, Pregrevica 118, Belgrade, Serbia
²Vinča Institute of Nuclear Sciences, P. O. Box 522, 11001 Belgrade, Serbia

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Abstract. Application of the level set method extended for the case of non-convex Hamiltonians is illustrated by the three dimensional (3D) simulation results of the profile evolution during anisotropic wet etching of silicon. Etching rate function is modeled on the basis of the silicon symmetry properties, by means of the interpolation technique using experimentally obtained values of the principal [100], [110], [111], and high index [311] directions in KOH solutions. The resulting level set equations are solved using an open source implementation of the sparse field method.
Key words:  Etching, level set, profile evolution, simulation

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PRIMENA LEVEL SET METODA NA NEKONVEKSNE HAMILTONIJANE Primena level set metoda, proširenog na slučaj nekonveksnog Hamiltonijana, je ilustrovana rezultatima trodimenzionalne (3D) simulacije evolucije profila tokom anizotropnog hemijskog (mokrog) nagrizanja u silicijumu. Funkcije brzine nagrizanja su modelovane uzimajući u obzir svojstva simetrije silicijuma, korišćenjem interpolacione tehnike i eksperimentalno dobijenih vrednosti glavnih [100], [110], [111] i [311] pravaca u KOH rastvaraču. Rezultujuće level set jednačine su rešavane implementacijom sparse field metoda.