Vol.10, No.2 (1997) 253-264
Abstract Original full swing CBiCMOS driver of power MOS transistor is proposed in this paper. Complementary pair of bipolar transistors on circuit output provides low output resistance. Therefore, the driver can operate at frequencies of few MHz and that has been confirmed with simulation. Static transfer characteristic has a shape of the hysteresis curve. High threshold is a function of control voltage. The results are confirmed by SPICE simulation for standard 2mu m technology process.
Key words: MOS transistor, CBiCMOS driver, power transistor, SPICE simulation.